| 摘要 |
<p>A phase change memory device and a method of manufacture thereof are provided to secure the overlap margin between the phase changing film pattern and the bottom electrode. The n-type impurity region(102) is formed within the surface of the semiconductor substrate(100). The PN diode(PND) is formed on N type impurity region. The PN diode comprises the laminating structure of P region(108) and N region(106) formed on N type impurity region. The bottom electrode(110) is formed on the PN diode and includes the SiGe film. The second insulating layer(112) having the contact hole(CH) is formed on the bottom electrode. The phase change film pattern(114) is formed on the second insulating layer including the contact hole.</p> |
