| 摘要 |
<p>The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate (1), an off-angle plane slanted from an m-plane (4) by a predetermined very small angle is prepared as a growth surface (3), which is a template of the crystal (2), at the time of growing a crystal (2) of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps (5) and terraces (6). According to the above-described configuration, even if an inexpensive sapphire substrate (1), which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step (5) as an a-plane on the terrace (6) by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace (6), and, in the mean time, the steps (5) become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields.</p> |
