| 摘要 |
PROBLEM TO BE SOLVED: To provide image data of high image quality without the decline of a signal charge storage amount and the sensitivity degradation of blue light, for which noise is suppressed more. SOLUTION: Since a second surface high concentration diffusion layer (N+)5 of the same polarity (first conductivity type) as an embedded photodiode (N-)3 is formed between the first surface high concentration diffusion layer (P+)4 of a polarity (second conductivity type) opposite to the embedded photodiode (N-)3 as a photoelectric conversion part and the surface of a silicon substrate 1, a leakage current (dark current) generated on the boundary surface of the surface of the silicon substrate 1 and the surface oxide film 7 is swept away to the inner side of the second surface high concentration diffusion layer (N+)5 of the same polarity (first conductivity type) as the embedded photodiode (N-)3, the leakage current does not intervene the side of the embedded photodiode (N-)3, and then low noise is realized and high image quality is obtained. COPYRIGHT: (C)2009,JPO&INPIT
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