NOVEL METHOD FOR CONFORMAL PLASMA IMMERSED ION IMPLANTATION ASSISTED BY ATOMIC LAYER DEPOSITION
摘要
<p>Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.</p>
申请公布号
WO2009099756(A1)
申请公布日期
2009.08.13
申请号
WO2009US31491
申请日期
2009.01.21
申请人
HANAWA, HIROJI;APPLIED MATERIALS, INC.;CHO, SEON-MEE;FOAD, MAJEED ALI