发明名称 EXPOSURE APPARATUS
摘要 An exposure apparatus is configured to include an electronic optical system 108 that generates an electron ray and irradiates a wafer W with the electron ray, a wafer stage WS that holds the wafer W, and an electron detector 44 and a fog preventing mechanism 70 that are placed between the electronic optical system 108 and the wafer stage WS. A substrate 71 constitutes the fog preventing mechanism 70, and opening holes 71a0 that penetrate up to the upper surface of the substrate 71 are formed in a first area of the bottom surface of the substrate 71, and opening holes 71a0 that are closed in the substrate 71 are formed in a second area of the bottom surface.
申请公布号 US2016062249(A1) 申请公布日期 2016.03.03
申请号 US201514738934 申请日期 2015.06.15
申请人 ADVANTEST CORPORATION 发明人 YAMADA Akio;SUGATANI Shinji
分类号 G03F7/20;G03F9/00 主分类号 G03F7/20
代理机构 代理人
主权项 1. An exposure apparatus comprising: a plurality of charged particle beam sources; a stage positioned to hold an irradiation target of the plurality of charged particle beam sources; a substrate between the plurality of charged particle beam sources and the stage, the substrate having a plurality of beam passing holes and a corresponding plurality of opening hole groups, the plurality of beam passing holes being arranged such that a charged particle beam of each of the plurality of charged particle beam sources passes through one of the beam passing holes, the opening hole groups being arranged so as to reduce the number of charged particles returning toward the irradiation target after having been scattered from the irradiation target due to irradiation by the plurality of charged particle beam sources and a plurality of charged particle detectors on the same side of the substrate as the plurality of charged particle beam sources, each of the charged particle detectors arranged to detect charged particles that have passed through a corresponding one of the opening hole groups after having been scattered from the irradiation target.
地址 Tokyo JP