Method of Performing Proximity Correction

摘要

A method of performing proximity correction of a mask layout is used during the generation of a masking structure for performing a processing step. The masking structure includes at least one opening that is delimited by a sidewall and that exposes an area that is to be processed. The method includes the steps of a) determining a value representing a flux of particles to a target portion, wherein the target portion is at least one of the group of a portion of the sidewall and a portion of the uncovered area and wherein the particles are generated during the processing of the area; and b) determining a corrected mask layout dependent on the value determined in step a).