发明名称 |
Metal-Oxide-Semiconductor Device Including a Multiple-Layer Energy Filter |
摘要 |
A MOS device includes first and second source/drains spaced apart relative to one another. A channel is formed in the device between the first and second source/drains. A gate is formed in the device between the first and second source/drains and proximate the channel, the gate being electrically isolated from the first and second source/drains and the channel. The gate is configured to control a conduction of the channel as a function of a potential applied to the gate. The MOS device further includes an energy filter formed between the first source/drain and the channel. The energy filter includes a superlattice structure wherein a mini-band is formed. The energy filter is operative to control an injection of carriers from the first source/drain into the channel. The energy filter, in combination with the first source/drain, is configured to produce an effective zero-Kelvin first source/drain.
|
申请公布号 |
US2009200540(A1) |
申请公布日期 |
2009.08.13 |
申请号 |
US20080027712 |
申请日期 |
2008.02.07 |
申请人 |
BJOERK MIKAEL T;KARG SIEGFRIED F;KNOCH JOACHIM;RIEL HEIKE E;RIESS WALTER H;SCHMID HEINZ |
发明人 |
BJOERK MIKAEL T.;KARG SIEGFRIED F.;KNOCH JOACHIM;RIEL HEIKE E.;RIESS WALTER H.;SCHMID HEINZ |
分类号 |
H01L29/06;H01L21/336 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|