THIN FILM TRANSISTOR HAVING LONG LIGHTLY DOPED DRAIN ON SOI SUBSTRATE AND PROCESS FOR MAKING SAME
摘要
<p>Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications.</p>
申请公布号
WO2009099535(A2)
申请公布日期
2009.08.13
申请号
WO2009US00533
申请日期
2009.01.27
申请人
CORNING INCORPORATED;JANG, JIN;WANG, CHUANCHE;WILLIAMS, CARLO A