| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a wiring structure having high withstand voltage characteristics and leakage resistance characteristics, and a method for manufacturing the same. SOLUTION: The semiconductor device includes: a semiconductor substrate provided with semiconductor elements; contact members formed on the semiconductor substrate and electrically contacted with conductive members of an upper and lower layers; a first insulating film formed in the same layer as the contact members; a wiring located above a first region contacting with a part of an upper surface of the contact members and the first region, and including a second region wider than the first region; and a second insulating film formed above the first insulating film so as to contact with at least a part from an upper side of a side of the first region of the wiring and a bottom surface of the second region. COPYRIGHT: (C)2009,JPO&INPIT |
