| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of improving heat dissipation of an element end surface while maintaining reflection characteristics of an end face coating film at an oscillation wavelength. SOLUTION: The semiconductor laser element 1 has a thermally conductive film 22 made of Al<SB>2</SB>O<SB>3</SB>formed between the end surface 20 of a laser element body P and an antireflective film 10. The thickness T<SB>3</SB>of the thermally conductive film 22 satisfies T<SB>3</SB>=λ/2n<SB>3</SB>, whereinλis the oscillation wavelength of the semiconductor laser element 1 and n<SB>3</SB>is the refractive index of the thermally conductive film 22 to the wavelengthλ. With this constitution, the semiconductor laser element 1 speedily conducts heat generated through light absorption of an active layer 12 etc., to the outside via the thermally conductive film 22 to improve the heat dissipation. This contributes to improvement in reliability of the semiconductor laser element 1. COPYRIGHT: (C)2009,JPO&INPIT
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