PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND STORAGE MEDIUM

摘要

A plasma etching method, a plasma etching apparatus, and a storage medium are provided to prevent particles due to the etching by forming a film containing carbon and fluorine in a process container. The cleaning gas is supplied to the process container. The cleaning gas is changed to the plasma. The material attached to the process container is removed(S2). The forming gas is supplied to the process container. The forming gas is changed to the plasma. The film containing the carbon and the fluorine is formed in the process container by the plasma. The substrate is mounted in a mount inside the process container(S5). The etching gas is supplied to the process container. The etching gas is changed to the plasma. The substrate is etched by the plasma(S6). The substrate is taken out from the process container(S7).