| 摘要 |
<p>#CMT# #/CMT# The device has an optically pumped surface-emitting vertical emitter (1) which emits in a vertical main radiating direction. A vertical section of the pumping radiation source (2) is configured so as to be index-guiding for pumping radiation in a lateral direction perpendicular to the main direction of pumping radiation and perpendicular to the vertical main radiating direction. #CMT#USE : #/CMT# Semiconductor laser diode. #CMT#ADVANTAGE : #/CMT# A vertical section of the pumping radiation source is configured so as to be index-guiding for pumping radiation in a lateral direction perpendicular to the main direction of pumping radiation and perpendicular to the vertical main radiating direction, and hence improves the efficiency of the laser diode and the overall system and high power outputs are obtained with high beam quality and compact structure. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The figure shows a sectional view of a semiconductor laser diode. 1 : Vertical emitter 2 : Pumping radiation source 3 : Substrate 4,6 : Buffer layer 5 : Pumping radiation layer 8 : Contact layer 10 : Vertical emission layer 11 : Bragg reflector 12 : Vertical radiation 13 : Wave guide.</p> |
