| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a field effect transistor for surely forming source/drain electrodes made of a metal single layer film with good adhesiveness on a gate insulating film. SOLUTION: The method of manufacturing a field effect transistor includes: (A) a step of applying silane coupling treatment on a surface of a substrate 11; (B) a step of forming a gate electrode 12 on the substrate 11 subjected to silane coupling treatment; (C) a step of forming a gate insulating film 13 on the gate electrode 12; (D) a step of applying silane coupling treatment on a surface of the gate insulating film 13; (E) a step of forming source/drain electrodes 14 made of a metal single layer film on the gate insulating film 13 subjected to silane coupling treatment; and (F) a step of forming a channel forming region 15 made of a semiconductor material layer on the gate insulating film 13 between the source/drain electrodes 14. COPYRIGHT: (C)2009,JPO&INPIT
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