| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a simple and highly practical SiC semiconductor device, which can form a high-quality MOS interface, without using a toxic gas and a special apparatus and accompanying safety and environmental problems. SOLUTION: The method of manufacturing a SiC semiconductor device includes a step of forming a SiC thin film with a high N content on a Sic substrate by epitaxial growth, by using chemical vapor deposition (CVD) which uses a gas for a SiC material and a N-contained gas for a dopant; and a step of forming a SiO<SB>2</SB>/SiC interface, by thermally oxidizing the SiC thin film with a high N content into a SiO<SB>2</SB>thin film. COPYRIGHT: (C)2009,JPO&INPIT
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