发明名称 STACKED DIE MEMORY
摘要 A memory includes a first die including a first array of phase change memory cells and a second die including a second array of phase change memory cells. The second die is stacked above the first die. The memory includes lines configured to access the first die and the second die. The first die and the second die are enclosed in a single package.
申请公布号 US2009196093(A1) 申请公布日期 2009.08.06
申请号 US20080023630 申请日期 2008.01.31
申请人 QIMONDA AG 发明人 HAPP THOMAS;PHILIPP JAN BORIS
分类号 G11C11/00;H01L21/02 主分类号 G11C11/00
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