| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, sufficiently enhancing a working precision of wiring. SOLUTION: This manufacturing method for the semiconductor device 1 is provided with a processes of: forming a metal wiring layer 3a on a semiconductor substrate 2; forming a resist pattern 4 in a prescribed area on the metal wiring layer 3a; forming a high heat resistance area 4a in an at least side wall part of the resist pattern 4, by enhancing heat resistance in one part of the resist pattern 4, and also forming non-high-heat-resistance area 4b having heat resistance lower than that of the high heat resistance area 4a, in a portion sandwiched by the high heat resistance area 4a, to reach an upper face of the resist pattern 4 from an under face thereof; and forming metal wiring 3 by etching the metal wiring layer 3a, using the resist pattern 4 as a mask. COPYRIGHT: (C)2009,JPO&INPIT |
