| 摘要 |
<p>A method for forming gate of a semiconductor device is provided to heal a damaged gate electrode layer sidewall by performing an annealing process on the side wall of a gate electrode layer. The gate insulating layer(104) and gate electrode layers(106,108) are formed on the semiconductor substrate(102). The thermal process is performed to eject the impurity element contained in the gate electrode layer. The gate electrode layer comprises the metal silicide layer. The thermal process is a LPCVD(Low Pressure Chemical Vapor Deposition) method. The thermal process is performed at a temperature of 400~1200‹C. The thermal process is performed under inert gas.</p> |
