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发明名称
形成低电容ESD装置的方法及其结构
摘要
在一实施例中,静电放电(ESD)装置使用该ESD装置内深处之高度掺杂的P区及N区以形成具有受控击穿电压的齐纳二极体。
申请公布号
TW200933874
申请公布日期
2009.08.01
申请号
TW097134579
申请日期
2008.09.09
申请人
半导体组件工业公司
发明人
汤玛士 基那;张基;法蓝欣Y 罗布;刘明焦;阿里 沙利;小约翰 麦可 派西;张乔治
分类号
H01L27/02(2006.01)
主分类号
H01L27/02(2006.01)
代理机构
代理人
陈长文
主权项
地址
美国
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