| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and a manufacturing method for an epitaxial wafer that reduce a temperature difference in a wafer holding section, lower the temperature of an internal heater, and increase temperature uniformity of the wafer to thereby have high productivity. SOLUTION: The manufacturing apparatus comprises a chamber 10, a gas introduction hole 20 provided in the chamber 10 to introduce a reaction gas into the chamber 10, a gas exhaust hole 30 provided in the chamber 10 to discharge the reaction gas, a rotary body unit 70 provided in the chamber 10, a wafer holding portion 50 provided at an upper part of the rotary body unit 70 to hold the wafer 40, the internal heater 100 provided in the rotary body unit 70 and an external heater 120 provided between the rotary body unit 70 and an internal wall 12 of the chamber 10. COPYRIGHT: (C)2009,JPO&INPIT
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