Page buffer circuit and method for a programmable memory device

摘要

A page buffer for an electrically programmable memory includes a plurality of storage units, each comprising a first latch and a second latch. Input switching means loads into the latch the data bit to be written and to be temporarily stored. The input switching means has an input terminal connected to the respective data line for receiving a set voltage provided therethrough. The input switching means provides the set voltage to the first or second input/output terminals of the latch depending on the data bit to be written. An output switch device transfers onto the respective data line the read data bit temporarily stored into the latch and has a first terminal coupled to one among the first and second input/output terminals of the latch, a second terminal connected to the respective data line and a control terminal receiving the output control signal.