发明名称 |
Method for forming gate electrode of semiconductor device |
摘要 |
A method for forming a gate electrode of a semiconductor device is provided wherein a hard mask layer which is a nitride film is deposited and subjected to an additional surface deposition process so that a matrix structure of a nitride film surface becomes more compact to reduce an etching ratio of the hard mask layer thereby increasing a thickness of the residual hard mask layer.
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申请公布号 |
US7566644(B2) |
申请公布日期 |
2009.07.28 |
申请号 |
US20050142362 |
申请日期 |
2005.06.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
NAM KI WON |
分类号 |
H01L21/20;H01L21/28;H01L21/027;H01L21/302;H01L21/314;H01L21/318;H01L21/3205;H01L21/3213;H01L21/336;H01L21/461;H01L21/4763;H01L21/60;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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