| 摘要 |
Method of inhibiting metal diffusion arising from laser dicing is provided. The method includes dividing a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the method exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment includes a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch may be performed on the chip.
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