| 摘要 |
A manufacturing method of a semiconductor device is provided to improve work efficiency of a package by preventing a package error without a change of a package process. A first insulation film(102) is formed on a substrate(100). A damascene pattern is formed on the first insulation film. A first process for forming a metal line(104) is performed inside the damascene pattern. A second process for forming a second insulation film(110) having a compressive stress higher than a tensile stress of the metal line is performed. After a multilayer metal line(124) is formed by the first process and the second process, a passivation film(126) is formed on the substrate. An annealing process is performed on the substrate including the passivation film. |
