| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetection semiconductor device capable of reducing the influence of electromagnetic waves. SOLUTION: Shields that transmit light to be detected and have conductivity are disposed on light receiving surfaces of photodiodes 1, 2 to prevent electric charges from being induced to the photodiodes 1, 2 by electromagnetic waves entering from the outside. Two kinds of filters having light transmittance depending on a wavelength of light are disposed on the light receiving surfaces of the photodiodes 1, 2, respectively, to take a difference between their spectral characteristics. The shield and filter may be made of, for example, polysilicon or a semiconductor thin film of a given conductivity type, and may be readily manufactured by incorporating those manufacturing processes into a semiconductor manufacturing process. COPYRIGHT: (C)2009,JPO&INPIT
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