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发明名称
NON-VOLATILE MEMORY DEVICE AND METHODS OF USING
摘要
The present disclosure adjusts the voltage threshold values of select gates of NAND strings. The select gates of the NAND string can be read, erased, and programmed.
申请公布号
US2009180330(A1)
申请公布日期
2009.07.16
申请号
US20080972312
申请日期
2008.01.10
申请人
SPAINSION LLC
发明人
VANBUSKIRK MICHAEL A.;BILL COLIN S.;AKAOGI TAKAO
分类号
G11C16/06;G11C11/34
主分类号
G11C16/06
代理机构
代理人
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地址
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