发明名称 SUBSTRATE TREATING APPARATUS
摘要 PROBLEM TO BE SOLVED: To reduce the consumption of a treatment liquid of a substrate treating apparatus, and to suppress the occurrence of static electricity. SOLUTION: A body 102 of the substrate treating apparatus 1 has a structure such that: a holding and rotating unit 111 which holds and rotates a semiconductor wafer W and a mist generating unit 120 generating mist of the treatment liquid at a periphery of the semiconductor wafer W are provided in a chamber 104; and a lamp 110 for heating which irradiates the semiconductor wafer W with infrared light is provided outside a quartz window 108. After the mist of the treatment liquid is generated at the periphery of the semiconductor wafer W, the mist of the treatment liquid is caused to stick on the semiconductor wafer W, and the treatment liquid is desorbed from the semiconductor wafer W, which is used to clean the semiconductor wafer W. The substrate treating apparatus 1 is an apparatus making good use of a phenomenon wherein a body having temperature above certain temperature is not wetted with fine mist called "dry mist". COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009158666(A) 申请公布日期 2009.07.16
申请号 JP20070333889 申请日期 2007.12.26
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 TANAKA MASATO;HIGUCHI AYUMI;NISHIZAWA HISAO
分类号 H01L21/304;G11B5/84 主分类号 H01L21/304
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