发明名称 PLATING APPARATUS AND PLATING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a bump having a flat top shape or forming a metal film having preferable in-plane uniformity even under a condition of high current density when performing the plating of an object (substrate) to be plated such as a semiconductor wafer. SOLUTION: A plating apparatus includes: a plating tank 10 which retains a plating liquid Q; an anode 26 which is immersed in the plating liquid in the plating tank; a holder 24 which retains the object W to be plated and arranges the object to be plated on a position opposite to an anode; a paddle 32 which is arranged between the anode and the object to be plated retained by the holder, is reciprocally moved in parallel with the object to be plated and agitates the plating liquid; and a control part which controls a paddle driving part for driving the paddle; wherein the control part controls the paddle driving part such that an average absolute value of the moving speed of the paddle falls into the range of 70 to 100 cm/sec. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009155726(A) 申请公布日期 2009.07.16
申请号 JP20080292174 申请日期 2008.11.14
申请人 EBARA CORP 发明人 SAITO NOBUTOSHI;FUJIKATA JUNPEI;YAMAMOTO TADAAKI;KAMIMURA KENJI
分类号 C25D21/10;C25D5/08;C25D7/12;C25D17/10;C25D21/00;H01L21/60 主分类号 C25D21/10
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