METHOD OF FORMING CONTACT HOLE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING THE SAME

摘要

A method for forming contact holes and a method for manufacturing a semiconductor device using the same are provided to obtain contact holes having inner width which is smaller than a limit width of a photoresist pattern formed by a photolithography. A first interlayer insulating film(12) is formed on a substrate(10). A dummy pattern(14) is formed on the first interlayer insulation film. A second interlayer insulating film(16) for covering the dummy pattern is formed. A photoresist pattern is formed on the second interlayer insulating film. The photoresist pattern includes an exposed portion. The dummy pattern crosses across the exposed portion. The first and second interlayer insulating films are etched by using the photoresist pattern and the dummy pattern as a mask. Thus, a plurality of contact holes are formed at opposite sides of the dummy pattern.