发明名称 |
Nonvolatile memory device and method of manufacturing the same |
摘要 |
Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.
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申请公布号 |
US7560768(B2) |
申请公布日期 |
2009.07.14 |
申请号 |
US20060594808 |
申请日期 |
2006.11.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KOH CHA-WON;CHUNG BYUNG-HONG;WOO SANG-GYUN;NAM JEONG-LIM;OH SEOK-HWAN;SONG JAI-HYUK;PARK HYUN;KANG YOOL |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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