A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A semiconductor for manufacturing a semiconductor device is provided to form a crystalline semiconductor layer with a large particle size by performing crystallization through laser beam irradiation on the whole surface. A metal layer is formed on a first substrate(10). An insulating layer is formed on the metal layer. A semiconductor layer(13a) is formed on the insulating layer. The laser beam is irradiated to the semiconductor layer to increase the crystallization of the semiconductor layer. The semiconductor layer is patterned to form an island type semiconductor layer of the thin film transistor. The island type silicon layer has a channel. The layer including the circuit is formed. The second substrate is attached to the layer including the circuit. The layer including the circuit is separated from the first substrate. The channel length direction of the thin film transistor is arranged along the irradiation direction of the laser beam about the channel.