发明名称 |
Lithography Patterning Technique |
摘要 |
A method for lithography patterning includes providing a substrate; forming a material layer over the substrate; exposing the material layer to a radiation, resulting in an exposed material layer; and removing a portion of the exposed material layer in a developer, resulting in a patterned material layer. The developer is an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide. In an embodiment, the organic base has a bulky group in its side chain, reducing its etching distance. In another embodiment, the organic base includes electron withdrawing groups, reducing its basicity. In yet another embodiment, the developer has a loading of the quaternary ammine ranging from about 0.01% to about 2.37%. The developer results in reduced line edge roughness and reduced line width roughness in the patterned material layer. |
申请公布号 |
US2016124310(A1) |
申请公布日期 |
2016.05.05 |
申请号 |
US201414529944 |
申请日期 |
2014.10.31 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lilin Chang;Chang Ching-Yu |
分类号 |
G03F7/32;G03F7/20 |
主分类号 |
G03F7/32 |
代理机构 |
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代理人 |
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主权项 |
1. A method for lithography patterning, comprising:
providing a substrate; forming a material layer over the substrate; exposing the material layer to a radiation, resulting in an exposed material layer; and removing a portion of the exposed material layer in a developer, resulting in a patterned material layer, wherein the developer is an alkaline aqueous solution having an organic base that is a quaternary ammonium hydroxide. |
地址 |
Hsin-Chu TW |