| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus for measuring the etching quantity of the material being processed and detecting the end point of etching using optical interference on the surface of a sample being processed, so as to simultaneously achieve long life and ensuring of sufficient light to be received of a light introduction section, to enable long term stable operation and to improve the processing accuracy by accurate etching quantity detection. SOLUTION: In the plasma processing apparatus for processing a sample being processed by generating plasma between a shower plate and a lower electrode, a detector for detecting light from a surface of the sample being processed via the shower plate includes a light introduction section composed of a light guide into which light is entered and a spectroscope for analyzing the light obtained at the light introduction section, wherein the end surface of the light introduction section through which light is entered is arranged at a distance of five times or more the mean free path of gas molecules in the vacuum vessel from the end surface of the shower plate facing the plasma. COPYRIGHT: (C)2009,JPO&INPIT
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