| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a multilevel interconnection structure containing a void made of a material with a low dielectric constant without using a thermal process. SOLUTION: A trench is formed on a dielectric layer 105, and a conformal dielectric barrier film and a metal diffusion barrier film are deposited in the trench. The trench is filled with a conductive material to form a conductive line 109. A porous barrier 111 is formed on the dielectric layer and the conductive line. A photoresist 112 is generated, and an etchant is brought into contact with the dielectric layer through its hole 113 via the porous barrier. The dielectric layer is etched off to form the void 114. The conformal dielectric barrier film works as a barrier against a wet-etching chemical. COPYRIGHT: (C)2009,JPO&INPIT |
