| 摘要 |
<P>PROBLEM TO BE SOLVED: To materialize a reactive sputtering method for controlling a polarization direction of a nitride semiconductor thin film by a simple method without being restricted in substrates. <P>SOLUTION: A method for manufacturing the nitride semiconductor is disclosed for manufacturing the nitride semiconductor using a reactive sputtering method by reacting nitrogen with at least one metal selected from the group consisting of aluminum, gallium, indium, scandium, aluminum-gallium alloy, aluminum-indium alloy, aluminum-scandium alloy, gallium-scandium alloy, gallium-indium alloy, and indium-scandium alloy, under an inert gaseous atmosphere, wherein oxygen is supplied together with nitrogen, and mol% of the oxygen with respect to the total mole number of nitrogen and oxygen is ≥0.8%, and ≤3.2%. <P>COPYRIGHT: (C)2009,JPO&INPIT |
