| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of decreasing the number of MOS transistors included in one pixel, and to provide a manufacturing method thereof. SOLUTION: Disclosed is a CMOS image sensor having a plurality of pixels converting an optical signal into an electric signal, wherein each of the pixels 10 includes: a photodiode 1 formed on a P-type Si substrate; an Si layer formed on the cathode of the photodiode 1 with an insulating film interposed; and a MOS transistor 2 formed on the Si layer. One of the source and drain (i.e. S/D) of the MOS transistor 2 is connected to a VDD line extending in a row direction, the other of the S and D of the MOS transistor 2 is connected to a ROW line extending in the row direction, and the gate electrode of the MOS transistor 2 is connected to a COLUMN line extending in a column direction crossing the row direction. COPYRIGHT: (C)2009,JPO&INPIT
|
