| 摘要 |
A nonvolatile semiconductor memory device includes: a semiconductor substrate; and a memory cell. The memory cell includes: a source region and a drain region formed at a distance from each other on the semiconductor substrate; a tunnel insulating film formed on a channel region of the semiconductor substrate, the channel region being located between the source region and the drain region; a charge storage film formed on the tunnel insulating film; a charge block film formed on the charge storage film; and a control electrode that is formed on the charge block film. The control electrode includes a Hf oxide film or a Zr oxide film having at least one element selected from the first group consisting of V, Cr, Mn, and Tc added thereto, and having at least one element selected from the second group consisting of F, H, and Ta added thereto.
|
