| 摘要 |
In sophisticated semiconductor devices including copper-based metallization systems, a substantially aluminum-free bump structure in device regions and a substantially aluminum-free wire bond structure in test regions may be formed on the basis of a manufacturing process resulting in identical final dielectric layer stacks in these device areas. Moreover, reliable wire bond connections may be obtained by providing a protection layer, such as an oxide layer, after exposing the respective contact metal, such as copper, nickel and the like, thereby providing highly uniform process conditions during the subsequent wire bonding process. The number of process steps may be reduced by making a decision as to whether a substrate is to become a product substrate or test substrate for estimating the reliability of actual semiconductor devices. For example, nickel contact elements may be formed above copper-based contact areas wherein the nickel may provide a base for wire bonding or forming a bump material thereon.
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