| 摘要 |
A manufacturing apparatus of a single crystal ingot is provided to increase production efficiency by reducing a time to form a reaction chamber of an atmosphere pressure state. A melting pot(10) is arranged inside a reaction chamber(40), and receives a silicon solution. A heater(20) surrounds the melting pot in order to heat the melting pot. A lifting unit lifts a cable(50) in which a seed crystal is fixed in order to grow the seed crystal into an ingot(51) of a predetermined size. A plurality of gas lines(71,72,73) supplies an inert gas. A main gas line(80) is connected to a reservoir in which the inert gas is stored. A regulator(82) is coupled in the main gas line.
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