| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing parasitic capacitance between wiring portions and preventing a short circuit caused by an air gap, a deterioration in breakdown voltage caused by the reduction of space between wirings, and the generation of a short circuit between the wiring portions, and its manufacturing method. SOLUTION: A third insulating film 110 covering the upper surface and the side surface of wiring portions 108 and 109 is formed on a first insulating film 102. The third insulating film 110 comprises a first region 155 having a first aspect ratio and a second region 156 having a second aspect ratio smaller than the first aspect ratio. The wiring portion 109 comprises a second region 156 having the second aspect ratio. An air gap 111 is formed on the first region 155. The air gap 111 is not formed on the second region 156. COPYRIGHT: (C)2009,JPO&INPIT
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