| 摘要 |
A manufacturing method of a tantalium nitride thin film is provided to form the tantalium nitride thin film with the high intensity and homogenized structure by manufacturing at a low temperature. A manufacturing method of a tantalium nitride thin film comprises: a step of mounting a target(180) made of tantalum material and a substrate(170) at the inside of a chamber(110) of a sputtering device(100); and a step of supplying the nitrogen and argon gas into the chamber inside. The sputtering device includes a gas supply part(120), the chamber, a first and second electrodes(131,132), a bias confirmation part(135), a first and second holders(141,142) and an exhaust pump(150). The first electrode is installed to be contacted with the substrate and connected to the bias confirmation part. The second electrode is installed to be contacted with a target and a connected to the bias confirmation part.
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