| 摘要 |
A method of fabricating a semiconductor device is provided to reduce thermal stress of a product which is applied to a Al metal by annealing process after forming a buffer layer. An interlayer insulating film(302) is formed on a semiconductor substrate(301) with a metal sputtering mode, and the interlayer insulating film is removed by patterning and etching process of the interlayer insulating film. A buffer layer(304) is formed on the interlayer insulating film in which the etching process is performed, in this step includes the anneal process while forming the buffer layer. The buffer layer is formed by one of oxide and nitride.
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