| 摘要 |
A method for forming silicide layer in a semiconductor device is provided have a stable property under high temperature process by forming silicide on a gate, a source, a drain electrode after forming a metal film and annealing it. A method for forming silicide layer in a semiconductor device is comprised of the steps: a gate electrode(24) and a source / drain electrode(27) are formed in on a semiconductor substrate(21); a silicide film is formed on the gate electrode and the source/drain electrode. The TaN film, the capping layer is formed on the silicide film which is formed by forming the metal film and annealing it.
|
