| 摘要 |
A semiconductor device (80,85) including semiconductor material (35,40) having a bend and a trench feature formed at the bend, and a gate structure (45,50) at least partially disposed in the trench feature. A method of fabricating a semiconductor structure including forming a semiconductor material with a trench feature over a layer, forming a gate structure at least partially in the trench feature, and bending the semiconductor material such that stress is induced in the semiconductor material in an inversion channel region of the gate structure.
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