SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THEREOF

摘要

A semiconductor device and a manufacturing method thereof are provided to enable stable and easy circuit design by reducing difference between real value of transistor capacitance and predicted value. A gate insulating film is formed at a gate forming region on a semiconductor substrate(10) and a primary gate pattern is formed on the gate insulating film. A secondary gate pattern is formed on the primary gate pattern and has larger width than that of the primary gate pattern. A side wall spacer(80a) is formed at a side surface of the primary and secondary gate patterns vertically along the side surface of the secondary gate pattern.