| 摘要 |
<p>Implant pattern critical dimension-key and production method are provided, which diminish influence by the reflection of the light and improve the treatment quantity within the predetermined time. An implant pattern critical dimension-key production method is as follows. The trench is formed on the semiconductor substrate(21). The oxide layer(26) consisting of the silicon oxide(si-oxide) is filled in the trench. The oxide layer is planarized. The polyblock is formed on the oxide layer. Polyblock is formed in the gate reticle manufacture.</p> |
