| 摘要 |
A manufacturing method of a semiconductor device is provided to obtain a same channel length and to reduce a practical size of a gate by forming asymmetrically a gate electrode on an STI(Shallow Trench Isolation) type isolation layer to form a transistor. A first oxide, a first nitride, and a second oxide are laminated on a semiconductor substrate(10). A trench is formed by performing a mask etch process. A second nitride and a third oxide(30) are deposited on the semiconductor substrate in order to bury the semiconductor substrate and the trench. An STI region is formed by performing a CMP(Chemical Mechanical Polishing) process. A photoresist is coated on a partial region of the STI. The photoresist and the first nitride are removed by performing an etch process. The second nitride is removed from the STI region corresponding to the removed part of the third oxide. A fourth oxide is formed on the semiconductor substrate. A polysilicon is deposited on the fourth oxide.
|
