| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transistor having an insulated control contact in a trench in a semiconductor crystal structure. <P>SOLUTION: Disclosed is the transistor having the insulated control contact within the trench in the semiconductor crystal structure, the transistor having: mesas which are a pair of semiconductor mesas defining the trench and each have at least one p-n junction; a buried channel layer which is a buried channel layer extending to top-surface portions of the semiconductor mesas and at least partially covering a wall of the trench, and provides a conductive path over the A face of the semiconductor crystal structure; a current diffusion layer which extends between the semiconductor mesas and below the bottom portion of the trench to reduce junction type field effect resistance in the device; and a doped type well which extends in the current diffusion layer from at least one of the mesas to a depth larger than the depth of the trench. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
