| 摘要 |
<p>A method for manufacturing a flash memory device is provided to enhance a retention characteristic by forming a mask pattern on a side of a spacer to prevent loss of charges electrified with a floating gate. A floating gate(200) and a control gate(330) are formed on an upper surface of a semiconductor substrate(100). A spacer(400) is formed on a lateral surface of the floating gate and a lateral surface of the control gate. A mask pattern(500a) is formed on the spacer and the control gate in order to cover the spacer and the control gate. The mask pattern includes a nitride. An etch process is performed by using the mask pattern as a mask. A silicide layer(700) is formed selectively on the upper surface of the semiconductor substrate.</p> |
