| 摘要 |
A method for controlling charge flux into a charge accumulation device includes determining a charge accumulation time during which charges are to be accumulated in the charge accumulation device, measuring a charge flux of a first ion beam produced from an ion source, determining a target number of charges to be accumulated in the charge accumulation device during the charge accumulation time based on the measured charge flux and, based on the determined target number of charges, modulating a second ion beam produced from the ion source to cause the target number of charges from the second ion beam to be accumulated in the charge accumulation device during the charge accumulation time. An ion processing device is configured for controlling the charge flux. An ion beam modulator modulates the ion beam.
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