| 摘要 |
Methods of fabricating a semiconductor device are provided. A photoresist pattern can be formed on an implantation target layer, and conductive impurities can be implanted into the implantation target layer using the photoresist pattern as a mask. A portion of the photoresist pattern can be removed, conductive impurities implanted in the photoresist pattern can be cleaned, and the remaining portion of the photoresist pattern can be removed.
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